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Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO(3) Thin Films with High Dielectric Response
BiFeO(3) is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ < 0.01) obtained on Bi(0.95)Y(0.05)FeO(3) films ep...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4860595/ https://ncbi.nlm.nih.gov/pubmed/27157090 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep25535 |
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