Younis, A., Chu, D., & Li, S. (2015). Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis. Sci Rep.
استشهاد بنمط شيكاغوYounis, Adnan, Dewei Chu, و Sean Li. "Evidence of Filamentary Switching in Oxide-based Memory Devices Via Weak Programming and Retention Failure Analysis." Sci Rep 2015.
MLA استشهادYounis, Adnan, Dewei Chu, و Sean Li. "Evidence of Filamentary Switching in Oxide-based Memory Devices Via Weak Programming and Retention Failure Analysis." Sci Rep 2015.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.