Storozhevykh, M. S., Arapkina, L. V., & Yuryev, V. A. (2015). Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: A Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C. Nanoscale Res Lett.

Storozhevykh, Mikhail S., Larisa V. Arapkina, und Vladimir A. Yuryev. "Evidence for Kinetic Limitations As a Controlling Factor of Ge Pyramid Formation: A Study of Structural Features of Ge/Si(001) Wetting Layer Formed By Ge Deposition At Room Temperature Followed By Annealing At 600 °C." Nanoscale Res Lett 2015.

Storozhevykh, Mikhail S., Larisa V. Arapkina, und Vladimir A. Yuryev. "Evidence for Kinetic Limitations As a Controlling Factor of Ge Pyramid Formation: A Study of Structural Features of Ge/Si(001) Wetting Layer Formed By Ge Deposition At Room Temperature Followed By Annealing At 600 °C." Nanoscale Res Lett 2015.