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Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps
In this work, we study the impact of random interface traps (RITs) at the interface of SiO( x )/Si on the electrical characteristic of 16-nm-gate high-κ/metal gate (HKMG) bulk fin-type field effect transistor (FinFET) devices. Under the same threshold voltage, the effects of RIT position and number...
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| Publicado en: | Nanoscale Res Lett |
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| Autores principales: | , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4266504/ https://ncbi.nlm.nih.gov/pubmed/25520590 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-633 |
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