Persichetti, L., Sgarlata, A., Mori, S., Notarianni, M., Cherubini, V., Fanfoni, M., . . . Balzarotti, A. (2014). Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires. Springer.
Citação norma ChicagoPersichetti, Luca, Anna Sgarlata, Stefano Mori, Marco Notarianni, Valeria Cherubini, Massimo Fanfoni, Nunzio Motta, and Adalberto Balzarotti. Beneficial Defects: Exploiting the Intrinsic Polishing-induced Wafer Roughness for the Catalyst-free Growth of Ge In-plane Nanowires. Springer, 2014.
Citação norma MLAPersichetti, Luca, et al. Beneficial Defects: Exploiting the Intrinsic Polishing-induced Wafer Roughness for the Catalyst-free Growth of Ge In-plane Nanowires. Springer, 2014.