Gautier, G., Cayrel, F., Capelle, M., Billoué, J., Song, X., & Michaud, J. (2012). Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces. Springer.

Gautier, Gael, Frederic Cayrel, Marie Capelle, Jérome Billoué, Xi Song, and Jean-Francois Michaud. Room Light Anodic Etching of Highly Doped N-type 4 H-SiC in High-concentration HF Electrolytes: Difference between C and Si Crystalline Faces. Springer, 2012.

Gautier, Gael, et al. Room Light Anodic Etching of Highly Doped N-type 4 H-SiC in High-concentration HF Electrolytes: Difference between C and Si Crystalline Faces. Springer, 2012.