Zhang, J., Huang, Q., Yu, H., & Lei, S. (2009). Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs. Molecular Diversity Preservation International (MDPI).
Chicago Style CitationZhang, Jia-Hong, Qing-An Huang, Hong Yu, i Shuang-Ying Lei. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs. Molecular Diversity Preservation International (MDPI), 2009.
Cita MLAZhang, Jia-Hong, Qing-An Huang, Hong Yu, i Shuang-Ying Lei. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs. Molecular Diversity Preservation International (MDPI), 2009.
Atenció: Aquestes cites poden no estar 100% correctes.