Sol-Gel Processed Yttrium-Doped SnO<sub>2</sub> Thin Film Transistors

Y-doped SnO<sub>2</sub> thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO<sub>2</sub> films was investigated via GIXRD, SPM, and XPS; th...

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Bibliografiset tiedot
Päätekijät: Changmin Lee, Won-Yong Lee, Hyunjae Lee, Seunghyun Ha, Jin-Hyuk Bae, In-Man Kang, Hongki Kang, Kwangeun Kim, Jaewon Jang
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI AG 2020-02-01
Sarja:Electronics
Aiheet:
sol-gel
sno<sub>2</sub>
thin film transistor
yttrium doping
Linkit:https://www.mdpi.com/2079-9292/9/2/254
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