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Spin—Based voltage comparator using spin-hall effect driven nanomagnets

In this work, we propose a spin-based voltage comparator using a hybrid spin-CMOS circuit model. In particular, we use a 3T-MTJ (three-terminal magnetic tunnel junction) model with an in-plane magnetic anisotropy (IMA) free layer employing a spin-orbit torque (SOT) based writing scheme in the therma...

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Detalles Bibliográficos
Main Authors: S. Wasef, H. Fariborzi
Formato: Artigo
Idioma:Inglês
Publicado: AIP Publishing LLC 2020-03-01
Series:AIP Advances
Acceso en liña:http://dx.doi.org/10.1063/1.5130491
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