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An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model
This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dim...
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| 主要な著者: | , , , , , |
|---|---|
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI AG
2019-01-01
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| シリーズ: | Electronics |
| 主題: | |
| オンライン･アクセス: | http://www.mdpi.com/2079-9292/8/1/99 |
| タグ: |
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