Ion Microbeam Studies of Charge Transport in Semiconductor Radiation Detectors With Three-Dimensional Structures: An Example of LGAD

The development of semiconductor detectors with an increased tolerance to high radiation levels often results in devices that deviate significantly from those of the classical design with planar electrodes. Decreasing the charge drift distance and/or introducing localised charge multiplication volum...

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Detalhes bibliográficos
Principais autores: Milko Jakšić, Andreo Crnjac, Gregor Kramberger, Miloš Manojlović, Gordana Laštovička-Medin, Mauricio Rodriguez Ramos
Formato: Artigo
Idioma:Inglês
Publicado em: Frontiers Media S.A. 2022-05-01
coleção:Frontiers in Physics
Assuntos:
ion microprobe
IBIC
charge collection efficiency
semiconductor detectors
LGAD
gain suppression
Acesso em linha:https://www.frontiersin.org/articles/10.3389/fphy.2022.877577/full
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