Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

Abstract The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory. Although the retention performance of the HfO2-b...

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Autores principales: Wenwu Xiao, Chen Liu, Yue Peng, Shuaizhi Zheng, Qian Feng, Chunfu Zhang, Jincheng Zhang, Yue Hao, Min Liao, Yichun Zhou
Formato: Artigo
Lenguaje:Inglês
Publicado: SpringerOpen 2019-07-01
Colección:Nanoscale Research Letters
Materias:
HfO2-based FeFET
Memory window
Retention
Endurance
ZrO2 seed layer
Acceso en línea:http://link.springer.com/article/10.1186/s11671-019-3063-2
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