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Different interfacial structures of Cu/In obtained by surface activated bonding (SAB) in vacuum and vapor-assisted vacuum ultraviolet (V-VUV) at atmospheric pressure

A difference in interfacial structure derived from a difference in binding mechanisms, was assessed to obtain a robust Cu/In interface with low-temperature fluxless solder bonding. As examples of typical bonding methods, Ar fast atom beam (Ar-FAB) surface activation in high vacuum and vapor-assisted...

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Hlavní autoři: Y.S. Chiu, C.R. Kao, A. Shigetou
Médium: Artigo
Jazyk:Inglês
Vydáno: Elsevier 2020-10-01
Edice:Materials & Design
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On-line přístup:http://www.sciencedirect.com/science/article/pii/S0264127520306006
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