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Different interfacial structures of Cu/In obtained by surface activated bonding (SAB) in vacuum and vapor-assisted vacuum ultraviolet (V-VUV) at atmospheric pressure
A difference in interfacial structure derived from a difference in binding mechanisms, was assessed to obtain a robust Cu/In interface with low-temperature fluxless solder bonding. As examples of typical bonding methods, Ar fast atom beam (Ar-FAB) surface activation in high vacuum and vapor-assisted...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Elsevier
2020-10-01
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| Col·lecció: | Materials & Design |
| Matèries: | |
| Accés en línia: | http://www.sciencedirect.com/science/article/pii/S0264127520306006 |
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