Effect of Bi doping on the thermoelectric properties of Mg2Si0.3Ge0.04Sn0.66 compound

N-type Bi-doped Mg2(Si0.3Ge0.04Sn0.66)1-xBix (0<x≤0.03) compounds were successfully fabricated by solid state reaction-spark plasma sintering (SPS). The XRD results indicate that all prepared samples are nearly phase pure Bi-doped solid solutions. The lattice constant and the electrical conductiv...

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Bibliografiset tiedot
Päätekijät: Jia Ju, Kang Yin, Mengfei Fang, Hong Cai, Huan Liu
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Elsevier 2022-05-01
Sarja:Journal of Materials Research and Technology
Aiheet:
Magnesium silicides
Bi doping
Thermoelectric properties
Electrical properties
Linkit:http://www.sciencedirect.com/science/article/pii/S2238785422005439
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