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Effect of Bi doping on the thermoelectric properties of Mg2Si0.3Ge0.04Sn0.66 compound
N-type Bi-doped Mg2(Si0.3Ge0.04Sn0.66)1-xBix (0<x≤0.03) compounds were successfully fabricated by solid state reaction-spark plasma sintering (SPS). The XRD results indicate that all prepared samples are nearly phase pure Bi-doped solid solutions. The lattice constant and the electrical conductiv...
Gorde:
| Egile Nagusiak: | , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Elsevier
2022-05-01
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| Saila: | Journal of Materials Research and Technology |
| Gaiak: | |
| Sarrera elektronikoa: | http://www.sciencedirect.com/science/article/pii/S2238785422005439 |
| Etiketak: |
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