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Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs
Long channel carbon nanotube transistor (CNT) can be used to overcome the high electric field effects in nanoscale length silicon channel. When maximum electric field is reduced, the gate of a field-effect transistor (FET) is able to gain control of the channel at varying drain bias. The device perf...
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| Главный автор: | |
|---|---|
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Hindawi Limited
2013-01-01
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| Серии: | Journal of Nanomaterials |
| Online-ссылка: | http://dx.doi.org/10.1155/2013/831252 |
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