Risultati della ricerca - Samuel Graham

Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200 °C di Farzad Sadeghi-Tohidi, David Samet, Samuel Graham, Olivier N Pierron

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Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces di Zhe Cheng, Luke Yates, Jingjing Shi, Marko J. Tadjer, Karl D. Hobart, Samuel Graham

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Stability of plasma‐enhanced atomic layer deposited barrier films in biological solutions di Ankit K. Singh, Katarina Adstedt, Tianxin Miao, Julie Champion, Preet M. Singh, Samuel Graham

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Experimental and computational analysis of thermal environment in the operation of HfO2 memristors di Darshan G. Pahinkar, Pradip Basnet, Matthew P. West, Bill Zivasatienraj, Alex Weidenbach, W. Alan Doolittle, Eric Vogel, Samuel Graham

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High thermal conductivity in wafer-scale cubic silicon carbide crystals di Zhe Cheng, Jianbo Liang, Keisuke Kawamura, Hao Zhou, Hidetoshi Asamura, Hiroki Uratani, Janak Tiwari, Samuel Graham, Yutaka Ohno, Yasuyoshi Nagai, Tianli Feng, Naoteru Shigekawa, David G. Cahill

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Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers di Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun, Kenny Huynh, Marko Tadjer, Tatyana Feygelson, Karl Hobart, Travis Anderson, Bradford Pate, Alan Jacobs, James Spencer Lundh, Mark Goorsky, Asif Khan, Patrick Hopkins, Samuel Graham

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Experimental observation of localized interfacial phonon modes di Zhe Cheng, Ruiyang Li, Xingxu Yan, Glenn Jernigan, Jingjing Shi, Michael E. Liao, Nicholas J. Hines, Chaitanya A. Gadre, Juan Carlos Idrobo, Eungkyu Lee, Karl D. Hobart, Mark S. Goorsky, Xiaoqing Pan, Tengfei Luo, Samuel Graham

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Scaled ultra-wide bandgap AlGaN polarization-graded FET with ultra-thin buffer layer di Yinxuan Zhu, Ashley Wissel-Garcia, Kidus Guye, Chandan Joishi, Can Cao, Seungheon Shin, Kyle Liddy, Emils G. B. Jurcik, Agnes Maneesha Dominic Merwin Xavier, Andrew A. Allerman, Brianna A. Klein, Andrew M. Armstrong, James S. Speck, Samuel Graham, Siddharth Rajan

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Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces di Mohamadali Malakoutian, Kelly Woo, Dennis Rich, Ramandeep Mandia, Xiang Zheng, Anna Kasperovich, Devansh Saraswat, Rohith Soman, Youhwan Jo, Thomas Pfeifer, Taesoon Hwang, Henry Aller, Jeongkyu Kim, Junrui Lyu, Janelle Keionna Mabrey, Thomas Andres Rodriguez, James Pomeroy, Patrick E. Hopkins, Samuel Graham, David J. Smith, Subhasish Mitra, Kyeongjae Cho, Martin Kuball, Srabanti Chowdhury

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β-Gallium oxide power electronics di Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng, Masataka Higashiwaki

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