Søgeresultater - Richard Neumann

A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives af Patrick Diehle, Frank Altmann, Susanne Hübner, Johannes Bruckmeier, Richard Neumann, Manuel Stabentheiner, Clemens Ostermaier

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Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes af Alexander D. Kinstler, Richard Neumann, Aidan Arthur Taylor, Sven Besendörfer, Elke Meissner, Roland Weingärtner, Frank Brunner, Enrico Brusaterra, Eldad Bahat Treidel, Jörg Schulze

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Correction: Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes af Alexander D. Kinstler, Richard Neumann, Aidan Arthur Taylor, Sven Besendörfer, Elke Meissner, Roland Weingärtner, Frank Brunner, Enrico Brusaterra, Eldad Bahat Treidel, Jörg Schulze

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