Risultati della ricerca - Emmanuel Kayede

MOCVD Growth of Relaxed, Crack-Free AlGaN on Tiled GaN Substrates di Nirupam Hatui, Henry Collins, Emmanuel Kayede, Feng Wu, Stacia Keller, Umesh K. Mishra

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Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate di Nirupam Hatui, Henry Collins, Emmanuel Kayede, Shubhra S. Pasayat, Weiyi Li, Stacia Keller, Umesh K. Mishra

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Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al_0.24Ga_0.76N di Emmanuel Kayede, Emre Akso, Brian Romanczyk, Nirupam Hatui, Islam Sayed, Kamruzzaman Khan, Henry Collins, Stacia Keller, Umesh K. Mishra

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