Rezultati - A.Y. Polyakov

Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking od A.A. Vasilev, D.S. Saranin, P.A. Gostishchev, S.I. Didenko, A.Y. Polyakov, A. Di Carlo

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Depth-resolved cathodoluminescence in γ/β-Ga2O3 polymorph junctions od E. B. Yakimov, E. E. Yakimov, A. Y. Polyakov, A. A. Vasilev, I. V. Schemerov, A. Kuznetsov, S. J. Pearton

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Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si od A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, S. J. Pearton, F. Ren, A. V. Chernykh, P. B. Lagov, T. V. Kulevoy

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Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates od Dae-Woo Jeon, Hoki Son, Jonghee Hwang, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, S. J. Pearton, In-Hwan Lee

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Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation od E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, A. S. Shikoh, F. Ren, S. J. Pearton

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Defects at the surface of β-Ga2O3 produced by Ar plasma exposure od A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, P. H. Carey, F. Ren, David J. Smith, S. J. Pearton

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Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates od A. Y. Polyakov, V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, E. B. Yakimov, M. P. Scheglov, I. V. Shchemerov, A. A. Vasilev, A. A. Kochkova, A. V. Chernykh, A. V. Chikiryaka, S. J. Pearton

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Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire od A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, A. V. Chernykh, K. D. Shcherbachev, A. S. Shikoh, A. Kochkova, A. A. Vasilev, S. J. Pearton

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Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy od A.Y. Polyakov, Jin-Hyeon Yun, A.S. Usikov, E.B. Yakimov, N.B. Smirnov, K.D. Shcherbachev, H. Helava, Y.N. Makarov, S.Y. Kurin, N.M. Shmidt, O.I. Rabinovich, S.I. Didenko, S.A. Tarelkin, B.P. Papchenko, In-Hwan Lee

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Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation od A. Y. Polyakov, L. A. Alexanyan, I. V. Schemerov, A. A. Vasilev, A. V. Chernykh, Anton Ivanov, Nadezhda Talnishnikh, Anton Chernyakov, A. L. Zakgeim, N. M. Shmidt, P. B. Lagov, A. S. Doroshkevich, R. Sh. Isayev, Yu. S. Pavlov, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton

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